- 您现在的位置：买卖IC网 > Sheet目录122 > BAT54HT1G (ON Semiconductor)DIODE SCHOTTKY DET/SW 30V SOD323
             BAT54HT1G, NSVBAT54HT1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25 ?C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 ?A) V(BR)R 30 ? ? V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT ? 7.6 10 pF Reverse Leakage (VR = 25 V) IR ? 0.5 2.0 ?Adc Forward Voltage (IF = 0.1 mAdc) VF ? 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF ? 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF ? 0.52 0.8 Vdc Reverse Recovery Time (IF = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1 trr ? ? 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF ? 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF ? 0.35 0.40 Vdc Notes: 1. A 2.0 k? variable resistor adjusted for a Forward Current (I F) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp ? t rr +10 V 2 k 820?? 0.1 ?F DUT VR 100 ?H 0.1 ?F 50 ? Output Pulse Generator 50 ? Input Sampling Oscilloscope tr tp t 10% 90% IF IR trr t iR(REC) = 1 mA OUTPUT PULSE (IF = I R = 10 mA; measured at iR(REC) = 1 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |